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In order to make use of the full thickness of a detector based on the p+ -n junction one needs to bias the structure with a suf ciently high voltage, the so-called full depletion voltage, to induce the depletion layer over the full physical thickness of silicon, up to the n+ ohmic contact on the backside The full depletion voltage increases as the square of detector thickness and is given as: qNd d2 (456) 2 Si where q is the electronic charge, d is the detector thickness, Nd is the donor concentration in n-type bulk and Si is the permittivity of silicon For example, for the above mentioned 2 mm thick detector built on silicon of 20 k cm resistivity the full depletion voltage is 650 V.

The required high bias voltage for thick detectors becomes at a certain point a limitation since it exceeds the breakdown voltage of the structure It is worth noting that the breakdown voltage of a silicon strip structure is much lower, by an order of magnitude, compared to the breakdown voltage of homogenous silicon bulk because of local high electric eld around the edges of p+ strips The breakdown voltage usually decreases with narrowing the strip width Signi cant progress has been made recently with respect to increasing breakdown voltage in silicon strip detectors and structures with strip pitch of the order of 100 m with Vdepl =.

Information in VLR. This register has a record for each MS currently served by one of its associated MSCs.

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120. Hoffmann, S.; Haxenkox, U.; Waser, R.; Jia, J. L.; Urban, K. 1997. Chemical solution deposition of BaTiO3 and SrTiO3 with columnar microstructures. In Science and Technology of Semiconductor Surface Preparation, edited by Hagashi, G. S.; Hirose, M.; Ragahavan, S.; Verhaverbeke, S. Mat. Res. Soc. Symp. Proc. 477:9 14. 121. Roy, R. 1969. Gel route to homogeneous glass preparation. J. Am. Ceram. Soc. 52:344. 122. Halder, S.; Schneller, T.; Waser, R.; Thomas, F. 2007. Microstructure and electrical properties of BaTiO3 and (Ba,Sr)TiO3 ferroelectric thin lms on nickel electrodes. J. Sol-Gel Sci. Tech. 42:203 207. 123. Ihlefeld, J. F.; Borland, W.; Maria, J. P. 2005. Synthesis and properties of barium titanate thin lm on copper substrates. In Ferroelectric Thin Films XIII, edited by Ramesh, R.; Maria, J. P.; Alexe, M.; Joshi, V. Mat. Res. Soc. Symp. Proc. 902:7 14. 124. Wu, A.; Vilarinho, P. M.; Srinivasan, S.; Kingon, A. I.; Reaney, I. M.; Woodward, D.; Ramos, A. R.; Alves, E. 2006. Microstructural studies of PZT thick lms on Cu foils. Acta Materialia. 54:3211 3220.

The settings found at Tools Options Document Properties Colors can be used to automatically color certain types of features with specific colors. For example, all Shell features can be colored red as they are created.

tox (angstrom)

Based on equations (1115) and (1116), Figure 1116(a) and (b) plots the curve of ZP vs f and the curve YP vs f, respectively Figure 1116(b) looks like Figure 1114 but they are essentially different, Figure 1116(b) draws the curve YP vs f, whereas Figure 1114 draws the curve ZS vs f In the case of LC combination in parallel, admittance is a more convenient parameter than impedance Therefore, only Figure 1116(b) but not 1116(a) is applied to our discussion From Figure 1116(b) it can be seen that 1) In the case of LC combination in parallel, The variation of admittance is a decrease of subceptance when the frequency is lower than fP or the SRF, The variation of admittance is an increase of subceptance when the frequency is higher than fP or the SRF.

(3.8)

And, The variation of subceptance is zero at the SRF 2) LC combination in parallel can be inserted into an impedance matching network as a branch in parallel only It is prohibited to apply it as an arm in series because the network would be open-circuited at fP or SRF where its resultant impedance is in nite as shown in Figure 1116(a) Figure 1117 shows an example before and after a LC combination in parallel is inserted into impedance matching network as a branch, in which the impedance variation from trace C, ZfL,C and ZfH,C, to trace D, ZfL,D and ZfH,D, over the bandwidth, fL to fH.

The placement sketch is listed first under the Hole Wizard feature. It contains one or more sketch points marking the hole centers. It may also contain construction geometry with relations and dimensions to parametrically locate the hole centers. I discuss placement sketches in more detail in the next section.

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